제조사부품번호

Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

RS 제품 번호:: 250-0541
제조사 부품 번호:: BSS138WH6327XTSA1
제조업체:: Infineon

Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

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RS 제품 번호:: 250-0541
제조사 부품 번호:: BSS138WH6327XTSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	0.28A
	Maximum Drain Source Voltage Vds	40V
	Series	BSS
	Package Type	SOT-323
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 0.28A
	Maximum Drain Source Voltage Vds 40V
	Series BSS
	Package Type SOT-323
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS138WH6327XTSA1

The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

100% lead-free

Maximum power dissipation is 360mW

Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

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