Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- RS 제품 번호:
- 250-0541
- 제조사 부품 번호:
- BSS138WH6327XTSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
₩372,000.00
일시적 품절
- 2026년 12월 10일 부터 15,000 개 단위 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 3000 | ₩124.00 | ₩375,000.00 |
| 6000 - 6000 | ₩112.00 | ₩337,800.00 |
| 9000 + | ₩102.00 | ₩303,600.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 250-0541
- 제조사 부품 번호:
- BSS138WH6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSS | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6000mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSS | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6000mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
100% lead-free
Maximum power dissipation is 360mW
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