Infineon BSS Type N-Channel MOSFET, 2.30 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1

RS 제품 번호:: 250-0556
Distrelec 제품 번호:: 304-40-501
제조사 부품 번호:: BSS306NH6327XTSA1
제조업체:: Infineon

Infineon BSS Type N-Channel MOSFET, 2.30 A, 30 V Enhancement, 3-Pin SOT-23 BSS306NH6327XTSA1

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Subtotal (1 pack of 10 units)*

₩4,380.00

추가로 2026년 10월 26일 부터 16,380 개 단위 배송

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수량	한팩당	한팩당*
10 - 10	₩438.00	₩4,380.00
20 - 90	₩394.00	₩3,940.00
100 - 240	₩356.00	₩3,560.00
250 - 490	₩320.00	₩3,200.00
500 +	₩288.00	₩2,880.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 250-0556
Distrelec 제품 번호:: 304-40-501
제조사 부품 번호:: BSS306NH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.30A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	BSS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	57mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.30A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series BSS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 57mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1V
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS306NH6327XTSA1

Infineon BSS Series MOSFET, 30V Maximum Drain-Source Voltage, 2.30A Maximum Continuous Drain Current - BSS306NH6327XTSA1

This MOSFET is an N-channel enhancement device designed for surface-mount power switching in Compact assemblies. It operates across a wide temperature range and is suitable for demanding environments requiring low conduction losses and moderate switching capability. The package supports automated placement and is compatible with typical board-level thermal management approaches.

Features and Benefits:

• 57mΩ RDS(on) reduces conduction losses during switching
• 80 nC typical gate charge enables controlled switching transitions
• 81W power dissipation supports high single-package power handling
• 20V gate tolerance allows flexibility in gate-drive choice
• -55°C to +150°C rating sustains operation in extreme temperatures

Applications

• Suitable for automotive sensor power switching
• Ideal for Compact DC power management circuits
• Used with low-voltage motor drivers and load switches
• Can be used for battery protection and distribution modules
• Suitable for surface-mounted power supply regulation

What thermal range can it reliably operate within?

It is rated to function from -55°C up to +150°C for high-temperature applications.

How does the gate voltage limitation affect drive selection?

The gate can tolerate up to 20V, so driver designs should not exceed this to prevent gate stress.

What package and mounting style does it use?

It is supplied in a SOT-23 package intended for surface mounting and suitable for automated PCB assembly.

What conduction performance can be expected during on-state?

The device exhibits a maximum drain-source resistance of 57mΩ, lowering voltage drop under load.

Is it suitable for regulated power dissipation scenarios?

It supports a maximum power dissipation of 81W, allowing use in moderately high-power single-device applications.