STMicroelectronics SCTW70N N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- RS 제품 번호:
- 233-3024
- 제조사 부품 번호:
- SCTW70N120G2V
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩95,480.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩95,480.00 |
| 5 - 9 | ₩93,620.00 |
| 10 - 14 | ₩90,780.00 |
| 15 - 19 | ₩88,940.00 |
| 20 + | ₩88,100.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-3024
- 제조사 부품 번호:
- SCTW70N120G2V
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCTW70N | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Power Dissipation Pd | 547W | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCTW70N | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Power Dissipation Pd 547W | ||
Maximum Operating Temperature 200°C | ||
Width 5.15mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Height 20.15mm | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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