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STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 201-0886
제조사 부품 번호:: SCTW90N65G2V
제조업체:: STMicroelectronics

STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩1,526,973.60

일시적 품절

2026년 8월 28일 부터 배송

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수량	한팩당	Per Tube*
30 - 120	₩50,899.12	₩1,526,956.68
150 +	₩49,880.16	₩1,496,421.72

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 201-0886
제조사 부품 번호:: SCTW90N65G2V
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	119A
	Maximum Drain Source Voltage Vds	650V
	Series	SCTW90
	Package Type	Hip-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	24mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	18 V
	Typical Gate Charge Qg @ Vgs	157nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	2.5V
	Maximum Power Dissipation Pd	565W
	Maximum Operating Temperature	200°C
	Standards/Approvals	No
	Length	15.75mm
	Height	20.15mm
	Width	5.15 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 119A
	Maximum Drain Source Voltage Vds 650V
	Series SCTW90
	Package Type Hip-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 24mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 18 V
	Typical Gate Charge Qg @ Vgs 157nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 2.5V
	Maximum Power Dissipation Pd 565W
	Maximum Operating Temperature 200°C
	Standards/Approvals No
	Length 15.75mm
	Height 20.15mm
	Width 5.15 mm
	Automotive Standard No

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitances

STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247

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