제조사부품번호

STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247

RS 제품 번호:: 230-0093
제조사 부품 번호:: SCTWA60N120G2-4
제조업체:: STMicroelectronics

STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩1,630,411.20

현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.

수량	한팩당	Per Tube*
30 - 120	₩54,347.04	₩1,630,428.12
150 +	₩52,717.08	₩1,581,512.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-0093
제조사 부품 번호:: SCTWA60N120G2-4
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	Hip-247
	Series	SCTW
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	52mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	388W
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3V
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Length	15.9mm
	Height	21.1mm
	Standards/Approvals	No
	Width	5.1 mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Package Type Hip-247
	Series SCTW
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 52mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 388W
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3V
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Length 15.9mm
	Height 21.1mm
	Standards/Approvals No
	Width 5.1 mm
	Automotive Standard No

Datasheet - SCTWA60N120G2-4

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247

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