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STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2

RS 제품 번호:: 239-5530
제조사 부품 번호:: SCTW60N120G2
제조업체:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2

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Subtotal (1 unit)*

₩44,480.80

재고있음

265 개 단위 배송 준비 완료

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수량	한팩당
1 - 4	₩44,480.80
5 - 9	₩43,578.40
10 - 14	₩42,713.60
15 - 19	₩41,867.60
20 +	₩41,002.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5530
제조사 부품 번호:: SCTW60N120G2
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	Hip-247
	Series	SCT
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	3V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	94nC
	Maximum Power Dissipation Pd	389W
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Operating Temperature	200°C
	Length	34.8mm
	Width	15.6 mm
	Standards/Approvals	UL
	Height	5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Package Type Hip-247
	Series SCT
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 3V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 94nC
	Maximum Power Dissipation Pd 389W
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Operating Temperature 200°C
	Length 34.8mm
	Width 15.6 mm
	Standards/Approvals UL
	Height 5mm
	Automotive Standard AEC-Q101

Datasheet - SCTW60N120G2

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247 SCTW60N120G2

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