STMicroelectronics SCT N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- RS 제품 번호:
- 239-5530
- 제조사 부품 번호:
- SCTW60N120G2
- 제조업체:
- STMicroelectronics
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대량 구매 할인 받기
5개 더 담고 ₩9,700.00 할인 받기
View bulk pricing optionsSubtotal (1 unit)*
₩64,460.00
마지막 RS 재고
- 최종적인 265 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 절감 |
|---|---|---|
| 1 - 4 | ₩64,460.00 | - |
| 5 - 9 | ₩62,520.00 | ₩9,700.00 |
| 10 - 14 | ₩60,660.00 | ₩38,000.00 |
| 15 + | ₩59,460.00 | ₩75,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 239-5530
- 제조사 부품 번호:
- SCTW60N120G2
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 18V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 389W | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | UL | |
| Width | 15.6mm | |
| Height | 5mm | |
| Length | 34.8mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 18V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 389W | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals UL | ||
Width 15.6mm | ||
Height 5mm | ||
Length 34.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
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