제조사부품번호

STMicroelectronics SCTW40N Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 219-4227
제조사 부품 번호:: SCTW40N120G2V
제조업체:: STMicroelectronics

STMicroelectronics SCTW40N Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩825,526.80

일시적 품절

2027년 1월 15일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 90	₩27,517.56	₩825,526.80
120 - 240	₩26,966.72	₩809,001.60
270 - 480	₩26,427.16	₩792,831.72
510 +	₩25,898.88	₩776,966.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 219-4227
제조사 부품 번호:: SCTW40N120G2V
제조업체:: STMicroelectronics

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCTW40N
	Package Type	Hip-247
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	700mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	13nC
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	3.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	15.75mm
	Width	5.15 mm
	Height	20.15mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 1200V
	Series SCTW40N
	Package Type Hip-247
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 700mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 13nC
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 3.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 15.75mm
	Width 5.15 mm
	Height 20.15mm
	Automotive Standard No

Datasheet - SCTW40N120G2V

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 200 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

STMicroelectronics SCTW40N Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin Hip-247

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