STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- RS 제품 번호:
- 213-3945
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
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₩51,248.80
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- 2026년 8월 31일 부터 배송
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- RS 제품 번호:
- 213-3945
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTWA90N65G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 656W | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.5V | |
| Maximum Operating Temperature | 200°C | |
| Width | 21.1 mm | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTWA90N65G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 656W | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.5V | ||
Maximum Operating Temperature 200°C | ||
Width 21.1 mm | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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