STMicroelectronics SCTWA90N65G2V-4 N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- RS 제품 번호:
- 213-3945
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
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- RS 제품 번호:
- 213-3945
- 제조사 부품 번호:
- SCTWA90N65G2V-4
- 제조업체:
- STMicroelectronics
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA90N65G2V-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 656W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Width | 21.1mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA90N65G2V-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 656W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 2.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Width 21.1mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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