제조사부품번호

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 204-3957
제조사 부품 번호:: SCTWA35N65G2V
제조업체:: STMicroelectronics

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

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대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩674,092.80

마지막 RS 재고

최종적인 60 개 unit(s)이 배송 준비 됨

수량	한팩당	Per Tube*
30 - 120	₩22,469.76	₩674,092.80
150 +	₩22,020.44	₩660,596.28

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 204-3957
제조사 부품 번호:: SCTWA35N65G2V
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	SiC Power Module
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	650V
	Package Type	Hip-247
	Series	SCTWA35N65G2V
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.072Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	73nC
	Maximum Power Dissipation Pd	240W
	Forward Voltage Vf	3.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	200°C
	Standards/Approvals	No
	Height	41.2mm
	Width	5.1 mm
	Length	15.9mm
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type SiC Power Module
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 650V
	Package Type Hip-247
	Series SCTWA35N65G2V
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.072Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 73nC
	Maximum Power Dissipation Pd 240W
	Forward Voltage Vf 3.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 200°C
	Standards/Approvals No
	Height 41.2mm
	Width 5.1 mm
	Length 15.9mm
	Automotive Standard No

datasheet - SCTWA35N65G2V

COO (Country of Origin):: CN

The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

Low capacitance

Very fast and robust intrinsic body diode

Very tight variation of on-resistance vs. temperature

STMicroelectronics SCTWA35N65G2V Type N-Channel SiC Power Module, 45 A, 650 V Enhancement, 3-Pin Hip-247

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