제조사부품번호

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247

RS 제품 번호:: 239-5529
제조사 부품 번호:: SCTW60N120G2
제조업체:: STMicroelectronics

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 30 units)*

₩1,334,424.00

재고있음

240 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
30 - 30	₩44,480.80	₩1,334,407.08
60 - 60	₩43,591.56	₩1,307,729.88
90 +	₩42,719.24	₩1,281,577.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 239-5529
제조사 부품 번호:: SCTW60N120G2
제조업체:: STMicroelectronics

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	60A
	Maximum Drain Source Voltage Vds	1200V
	Series	SCT
	Package Type	Hip-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	389W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	3V
	Typical Gate Charge Qg @ Vgs	94nC
	Maximum Gate Source Voltage Vgs	18 V
	Maximum Operating Temperature	200°C
	Length	34.8mm
	Standards/Approvals	UL
	Width	15.6 mm
	Height	5mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 60A
	Maximum Drain Source Voltage Vds 1200V
	Series SCT
	Package Type Hip-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 389W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 3V
	Typical Gate Charge Qg @ Vgs 94nC
	Maximum Gate Source Voltage Vgs 18 V
	Maximum Operating Temperature 200°C
	Length 34.8mm
	Standards/Approvals UL
	Width 15.6 mm
	Height 5mm
	Automotive Standard AEC-Q101

Datasheet - SCTW60N120G2

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247

관련된 링크들