제조사부품번호

Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

RS 제품 번호:: 349-196
제조사 부품 번호:: IPDQ60T017S7AXTMA1
제조업체:: Infineon

Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩32,035.20

재고있음

750 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩32,035.20
10 - 99	₩28,829.80
100 +	₩26,581.32

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-196
제조사 부품 번호:: IPDQ60T017S7AXTMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	113A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-HDSOP-22
	Series	IPD
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	0.017Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	196nC
	Forward Voltage Vf	0.82V
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC Q101, RoHS, JEDEC
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 113A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-HDSOP-22
	Series IPD
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 0.017Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 196nC
	Forward Voltage Vf 0.82V
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC Q101, RoHS, JEDEC
	Automotive Standard AEC-Q101

Datasheet - IPDQ60T017S7AXTMA1

COO (Country of Origin):: MY

The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.

Optimized price performance in low frequency switching applications

High pulse current capability

Seamless diagnostics at lowest system cost

Increased system performance

Minimized conduction losses

More reliability and longer system lifetime

Shock and vibration resistance

No contact arcing or bouncing

Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

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