Infineon HEXFET N-Channel MOSFET, 51 A, 55 V, 3-Pin TO-263 IRFZ46ZSTRLPBF
- RS 제품 번호:
- 214-4463
- 제조사 부품 번호:
- IRFZ46ZSTRLPBF
- 제조업체:
- Infineon
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- RS 제품 번호:
- 214-4463
- 제조사 부품 번호:
- IRFZ46ZSTRLPBF
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 51A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 13.6mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 82W | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 51A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 13.6mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 82W | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Strong IRFET power MOSFET is optimized for low RDS(on) and high current capability. It is ideal for low frequency applications requiring performance and ruggedness.
It is optimized for synchronous rectification
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