Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263

RS 제품 번호:: 165-8196
제조사 부품 번호:: IRF1010ZSTRLPBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 94 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

₩1,128,000.00

재고있음

2,400 개 단위 배송 준비 완료

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수량	한팩당	릴당*
800 - 800	₩1,410.00	₩1,127,699.20
1600 - 2400	₩1,381.80	₩1,105,139.20
3200 +	₩1,353.60	₩1,083,030.40

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RS 제품 번호:: 165-8196
제조사 부품 번호:: IRF1010ZSTRLPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	94A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-263
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	11.3 mm
	Height	4.83mm
	Length	10.67mm
	Automotive Standard	AEC-Q101

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 94A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-263
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 11.3 mm
	Height 4.83mm
	Length 10.67mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF

This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages Advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.

Features & Benefits

• High continuous drain current of 94A supports substantial load applications

• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency

• Maximum drain-source voltage of 55V enables design flexibility

• High reliability with a maximum operating temperature of 175°C

• Fast switching capabilities reduce delays in circuit response

• N-channel configuration is suitable for Advanced electronic designs

Applications

• Utilised in power management and conversion systems

• Employed in motor control circuits for automation technologies

• Suitable for power supply designs demanding high efficiency

• Integral in electric vehicle power electronics

• Used in renewable energy systems for effective energy conversion

What are the implications of the low on-resistance feature?

The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.

How does this MOSFET perform in high-temperature environments?

It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.

What type of mounting is required for this component?

This device is designed for surface mount applications, allowing Compact layout and efficient thermal management on printed circuit boards.

Can it handle pulsed currents effectively?

Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.

What characteristics should I consider for circuit compatibility?

Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.