N-Channel MOSFET, 94 A, 55 V, 3-Pin D2PAK Infineon IRF1010ZSTRLPBF
- RS 제품 번호:
- 165-8196
- 제조사 부품 번호:
- IRF1010ZSTRLPBF
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
가격 개당가격(800개가 1릴안에)**
₩1,323.52
2400 재고있음 5-9영업일내 홍콩 발송*
* 배송 날짜는 선택한 수량과 배송 주소에 따라 달라질 수 있습니다.
수량 | 한팩당 | 릴당** |
|---|---|---|
| 800 - 800 | ₩1,323.52 | ₩1,058,816.00 |
| 1600 - 2400 | ₩1,297.20 | ₩1,037,609.60 |
| 3200 + | ₩1,270.88 | ₩1,016,854.40 |
** 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 165-8196
- 제조사 부품 번호:
- IRF1010ZSTRLPBF
- 제조업체:
- Infineon
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 94A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF1010ZSTRLPBF
This surface mount MOSFET provides exceptional performance in various applications. Created by Infineon, it leverages advanced processing techniques to deliver low on-resistance and high current handling capabilities. Its effectiveness in high-temperature environments makes it an important component for professionals in automation, electronics, electrical, and mechanical sectors.
Features & Benefits
• High continuous drain current of 94A supports substantial load applications
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs
• Low RDS(on) of 7.5mΩ minimises power losses and enhances efficiency
• Maximum drain-source voltage of 55V enables design flexibility
• High reliability with a maximum operating temperature of 175°C
• Fast switching capabilities reduce delays in circuit response
• N-channel configuration is suitable for advanced electronic designs
Applications
• Utilised in power management and conversion systems
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion
• Employed in motor control circuits for automation technologies
• Suitable for power supply designs demanding high efficiency
• Integral in electric vehicle power electronics
• Used in renewable energy systems for effective energy conversion
What are the implications of the low on-resistance feature?
The low on-resistance of 7.5mΩ ensures minimal heat generation during operation, leading to increased efficiency and reduced cooling requirements.
How does this MOSFET perform in high-temperature environments?
It supports maximum operating temperatures of up to 175°C, making it suitable for harsh conditions without compromising performance.
What type of mounting is required for this component?
This device is designed for surface mount applications, allowing compact layout and efficient thermal management on printed circuit boards.
Can it handle pulsed currents effectively?
Yes, it features a pulsed drain current rating of 360A, enabling it to manage transient conditions efficiently.
What characteristics should I consider for circuit compatibility?
Ensure that the gate threshold voltage ranges from 2V to 4V to ensure proper switching behaviour within your circuit design.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
속성 | 값 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 94 A |
| Maximum Drain Source Voltage | 55 V |
| Package Type | D2PAK (TO-263) |
| Series | HEXFET |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 11.3mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Length | 10.67mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 4.83mm |