Infineon HEXFET Type N-Channel MOSFET, 64 A, 55 V TO-263 IRFZ48NSTRLPBF

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Subtotal (1 pack of 2 units)*

₩5,000.80

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한팩당*
2 - 8₩2,500.40₩5,000.80
10 - 98₩2,378.20₩4,756.40
100 - 248₩2,246.60₩4,493.20
250 - 498₩2,077.40₩4,154.80
500 +₩1,908.20₩3,816.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
258-3990
제조사 부품 번호:
IRFZ48NSTRLPBF
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

64A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.014Ω

Maximum Power Dissipation Pd

130W

Typical Gate Charge Qg @ Vgs

81nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-40-547

The Infineon HEXFET power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Advanced Process Technology

Surface Mount

Low-profile through-hole

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

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