Infineon HEXFET Type N-Channel MOSFET, 110 A, 55 V Enhancement, 3-Pin TO-263 IRF3205ZSTRLPBF

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Subtotal (1 pack of 10 units)*

₩20,360.40

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한팩당
한팩당*
10 - 10₩2,036.04₩20,360.40
20 - 90₩1,998.44₩19,984.40
100 - 240₩1,962.72₩19,627.20
250 - 490₩1,927.00₩19,270.00
500 +₩1,893.16₩18,931.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
222-4735
제조사 부품 번호:
IRF3205ZSTRLPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

170W

Typical Gate Charge Qg @ Vgs

76nC

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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