Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

RS 제품 번호:: 210-4984
제조사 부품 번호:: SIHG15N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-247AC SIHG15N80AE-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 5 units)*

₩29,328.00

일시적 품절

2026년 6월 29일 부터 195 개 단위 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩5,865.60	₩29,328.00
10 - 10	₩5,717.40	₩28,587.00
15 +	₩5,631.60	₩28,158.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-4984
제조사 부품 번호:: SIHG15N80AE-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	800V
	Package Type	TO-247AC
	Series	E
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	304mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	156W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	4.6mm
	Width	15.5mm
	Length	28.6mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 800V
	Package Type TO-247AC
	Series E
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 304mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 156W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 4.6mm
	Width 15.5mm
	Length 28.6mm
	Automotive Standard No

Datasheet - SIHG15N80AE

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 13A Continuous Drain Current - SIHG15N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for industrial and power-conversion roles where robust drain-source blocking is required. It operates as an N-channel enhancement device in a through-hole TO-247AC package, offering suitability for discrete power stages and retrofit designs that require a removable power component.

Features and Benefits:

• 800V drain-source rating for high-voltage switching capability • 13 A continuous drain current for steady load operation • 304 mΩ Rds(on) reduces conduction losses in power paths • 35 nC typical gate charge enables predictable drive requirements • 156W power dissipation supports elevated power throughput • 30V maximum gate-source voltage permits standard gate-drive voltages

Applications

• Suitable for industrial motor drive front-ends in automation systems • Ideal for high-voltage power supplies and DC-DC converters • Used for soft-switching stages in power electronics research • Can be used for prototype and repair tasks requiring through-hole mounting

What temperature range can it tolerate during operation?

It functions across a -55 °C to 150 °C operating range, allowing use in environments with wide thermal variation.

What mounting style is required for PCB implementation?

The device is intended for through-hole mounting in a TO-247AC footprint, facilitating sturdy mechanical attachment and heat-sink integration.

How many electrical connections does it present to the board?

Three pins provide drain, gate and source connections consistent with conventional transistor layouts.

What gate-drive considerations should designers note?

Designers should ensure gate-drive amplitudes do not exceed 30V and account for the 35 nC typical gate charge when sizing driver currents.