Vishay E N-Channel MOSFET, 8 A, 800 V Enhancement, 3-Pin TO-247 SIHG11N80AE-GE3

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Subtotal (25 units, in tubes of 25)*

₩94,500.00

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  • 최종적인 1,475 개 unit(s)이 배송 준비 됨

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한팩당
Per Tube*
25 - 25₩3,780.00₩94,480.00
50 - 225₩3,698.00₩92,440.00
250 +₩3,328.00₩83,180.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
210-4981
제조사 부품 번호:
SIHG11N80AE-GE3
제조업체:
Vishay
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브랜드

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

391mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Maximum Power Dissipation Pd

78W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

15.5mm

Length

45.3mm

Height

4.83mm

Automotive Standard

No

The Vishay E Series Power MOSFET has TO-247AC package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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