Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- RS 제품 번호:
- 279-9912
- 제조사 부품 번호:
- SIHG155N60EF-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩14,882.08
일시적 품절
- 470 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 2 | ₩7,441.04 | ₩14,882.08 |
| 4 - 8 | ₩7,290.64 | ₩14,581.28 |
| 10 - 28 | ₩7,140.24 | ₩14,280.48 |
| 30 - 98 | ₩6,989.84 | ₩13,979.68 |
| 100 + | ₩6,730.40 | ₩13,462.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 279-9912
- 제조사 부품 번호:
- SIHG155N60EF-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.159Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 15.7mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.159Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 15.7mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
관련된 링크들
- Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SiHG039N60EF Type N-Channel MOSFET, 61 A, 600 V Enhancement, 3-Pin TO-247 SIHG039N60EF-GE3
- Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247 SIHG22N60EF-GE3
- Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
- Vishay SiHG105N60EF Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247 SIHG105N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay EF Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin TO-247 SiHG70N60EF-GE3
- Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3