Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

RS 제품 번호:: 188-4876
제조사 부품 번호:: SIHG21N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247AC SIHG21N80AE-GE3

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Subtotal (1 tube of 25 units)*

₩136,400.00

25 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
25 - 25	₩5,456.00	₩136,380.00
50 - 75	₩5,336.00	₩133,400.00
100 +	₩5,216.00	₩130,420.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-4876
제조사 부품 번호:: SIHG21N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	17.4A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	235mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	5.31mm
	Length	15.87mm
	Height	20.82mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 17.4A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 235mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 5.31mm
	Length 15.87mm
	Height 20.82mm
	Automotive Standard No

Datasheet SIHG21N80AE-GE3

Vishay Series E Power MOSFET, 800V Drain Source Voltage, 17.4A Continuous Drain Current - SIHG21N80AE-GE3

This power MOSFET is a high-voltage, N-channel switching device designed for industrial and power-conversion environments. It operates as an enhancement-mode transistor capable of handling substantial voltages and currents while being mounted through-hole in a TO-247AC package. The device is suitable for systems that demand rugged semiconductor switching across a wide ambient temperature range.

Features and Benefits:

• 800V drain rating enables high-voltage switching capability
• 17.4A continuous drain supports significant load current
• 235mΩ Rds(on) provides reduced conduction losses
• 179W power dissipation allows high-power operation
• 48nC typical gate charge yields predictable switching energy
• 30V gate rating permits common gate-drive voltages

Applications

• Suitable for industrial high-voltage power supplies
• Ideal for inverter and motor-drive switching stages
• Used with hard-switching topologies in power converters
• Can be used for class-D audio amplifiers requiring high voltage
• Suitable for energy and renewable power electronics

What gate-drive voltage range can I use safely?

The device accepts a maximum gate-to-source voltage of 30V, so gate-drive circuits should be designed to remain within this limit to avoid gate stress.

How does it perform across temperature extremes?

The transistor is rated to operate from -55°C up to 150°C, permitting use in elevated-temperature industrial installations with appropriate thermal management.

What mounting considerations apply for PCB design?

It is supplied in a through-hole TO-247AC package, so board layouts should include suitable hole spacing and heat-sinking provisions for the package footprint.

What switching behaviour should I expect from the gate characteristics?

With a typical total gate charge of 48nC, designers can estimate switching energy and select gate drivers that balance switching speed and EMI for their topology.