Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

RS 제품 번호:: 210-4986
제조사 부품 번호:: SIHG17N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel Power MOSFET, 15 A, 800 V Enhancement, 3-Pin TO-247AC SIHG17N80AE-GE3

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Subtotal (1 pack of 5 units)*

₩30,361.50

추가로 2026년 6월 29일 부터 1,475 개 단위 배송

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수량	한팩당	한팩당*
5 - 5	₩6,072.30	₩30,361.50
10 - 10	₩5,924.10	₩29,620.50
15 +	₩5,830.50	₩29,152.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 210-4986
제조사 부품 번호:: SIHG17N80AE-GE3
제조업체:: Vishay

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	15A
	Maximum Drain Source Voltage Vds	800V
	Series	E
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	250mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	41nC
	Maximum Power Dissipation Pd	179W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30V
	Maximum Operating Temperature	150°C
	Length	35.3mm
	Height	4.83mm
	Standards/Approvals	RoHS
	Width	15.66mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 15A
	Maximum Drain Source Voltage Vds 800V
	Series E
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 250mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 41nC
	Maximum Power Dissipation Pd 179W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30V
	Maximum Operating Temperature 150°C
	Length 35.3mm
	Height 4.83mm
	Standards/Approvals RoHS
	Width 15.66mm
	Automotive Standard No

Datasheet - SIHG17N80AE-GE3

Vishay Series E Power MOSFET, 800V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHG17N80AE-GE3

This power MOSFET is a high-voltage switching transistor designed for through-hole mounting in industrial power electronics. It operates as an N-channel enhancement device and is intended for applications requiring substantial voltage headroom and moderate continuous current, providing a robust semiconductor solution for switching and power-conversion roles.

Features and Benefits:

• 800V maximum drain-source voltage enables high-voltage switching
• 15A continuous drain current supports sustained load duty
• 250mΩ maximum Rds(on) reduces conduction losses
• 179W power dissipation allows significant thermal handling
• 41nC typical gate charge enables predictable switching behaviour
• 30V gate-source limit permits standard gate-drive voltages

Applications

• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial inverter stages and motor drive front ends
• Used for power-factor correction circuits in mains equipment
• Can be used for isolated high-voltage converters
• Suitable for laboratory test rigs requiring through-hole components

What package type is provided for prototyping and heat-sinking?

The device is supplied in a TO-247AC through-hole package that facilitates robust mounting and attachment of standard heatsinks for thermal management.

What junction temperature range can be expected during operation?

The component is rated to operate up to a maximum temperature of 150°C with a minimum specified limit of -55°C for storage and low-temperature operation.

How does its gate-charge specification affect switching design?

A typical gate charge of 41nC at rated gate drive allows designers to estimate gate-drive energy and select suitable drivers to balance switching speed and EMI.

What mounting and pin-count considerations apply to circuit layout?

The part uses a three-pin through-hole format, enabling secure board fixation and straightforward connection in conventional power layouts.