Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- RS 제품 번호:
- 268-8298
- 제조사 부품 번호:
- SIHG150N60E-GE3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 25 units)*
₩122,012.00
일시적 품절
- 2026년 1월 05일 부터 500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 25 - 75 | ₩4,880.48 | ₩121,993.20 |
| 100 - 475 | ₩3,996.88 | ₩99,940.80 |
| 500 - 975 | ₩3,917.92 | ₩97,948.00 |
| 1000 + | ₩3,838.96 | ₩95,992.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 268-8298
- 제조사 부품 번호:
- SIHG150N60E-GE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | SIHG | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 179W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series SIHG | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 179W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay E series power MOSFET which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
관련된 링크들
- Vishay SIHG Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-247AC SIHG150N60E-GE3
- Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay SIHG Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-247AC
- Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3
- Vishay SIHG Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-247AC SIHG155N60EF-GE3
- Vishay SiHG039N60EF Type N-Channel MOSFET, 61 A, 600 V Enhancement, 3-Pin TO-247 SIHG039N60EF-GE3
- Vishay SiHG22N60EF Type N-Channel MOSFET, 19 A, 600 V Enhancement, 3-Pin TO-247 SIHG22N60EF-GE3
- Vishay SiHG052N60EF Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-247 SIHG052N60EF-GE3
