제조사부품번호

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

RS 제품 번호:: 228-2870
제조사 부품 번호:: SIHG24N80AE-GE3
제조업체:: Vishay

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

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RS 제품 번호:: 228-2870
제조사 부품 번호:: SIHG24N80AE-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	850V
	Series	E
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	184mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	208W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	59nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 850V
	Series E
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 184mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 208W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 59nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SIHG24N80AE-GE3

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Vishay E Type N-Channel MOSFET, 21 A, 850 V Enhancement, 3-Pin TO-247 SIHG24N80AE-GE3

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