Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

RS 제품 번호:: 180-7324
제조사 부품 번호:: SI7956DP-T1-GE3
제조업체:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 reel of 3000 units)*

₩8,517,600.00

일시적 품절

2026년 10월 27일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3000 - 3000	₩2,839.20	₩8,517,600.00
6000 - 9000	₩2,753.40	₩8,262,540.00
12000 +	₩2,671.50	₩8,014,500.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7324
제조사 부품 번호:: SI7956DP-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	3.5W
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Standards/Approvals	No
	Length	6.25mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 3.5W
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Standards/Approvals No
	Length 6.25mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay SI7956DP Series MOSFET, 150V Drain Source Voltage, 4.1A Continuous Drain Current - SI7956DP-T1-GE3

This dual N-channel MOSFET is a surface-mount switching device designed for high-voltage power applications in industrial and electronic systems. It delivers controlled conduction for load switching and power conversion tasks, operating across a wide ambient range and intended for board-level integration where compact, dual-transistor solutions are required.

Features and Benefits:

• 150V drain tolerance enables high-voltage switching capabilities • 4.1A continuous drain current supports moderate load currents • 0.1Ω Rds(on) minimises conduction losses for improved efficiency • 17nC typical gate charge allows predictable switching behaviour • 3.5W power dissipation manages thermal load in Compact assemblies

Applications

• Suitable for DC-DC converter stages in automation equipment • Ideal for motor driver half-bridge circuits in control panels • Used for switched-mode power supplies in industrial electronics • Can be used for power distribution switches on Compact PCBs

What are the allowable gate and drain voltages for safe operation?

The gate may be driven up to 20V and the device withstands drain-source voltages up to 150V.

What thermal extremes can the device tolerate during operation?

It is rated for continuous use from -50°C up to a maximum operating temperature of 150°C.

How many pins and what package type should be expected for PCB layout?

The component is supplied as an 8-pin PowerPack surface-mount device suited to standard land patterns.

How does the dual configuration affect circuit implementation?

Two transistors are provided in a single package, enabling Compact paired-switch arrangements and simplified board routing.