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Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

RS 제품 번호:: 180-7886
제조사 부품 번호:: SI7956DP-T1-GE3
제조업체:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩26,207.20

재고있음

추가로 2025년 12월 29일 부터 3,000 개 단위 배송

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수량	한팩당	한팩당*
5 - 745	₩5,241.44	₩26,207.20
750 - 1495	₩5,109.84	₩25,549.20
1500 +	₩5,030.88	₩25,154.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7886
제조사 부품 번호:: SI7956DP-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Series	SI7956DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	3.5W
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	17nC
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Width	5.26 mm
	Height	1.12mm
	Standards/Approvals	No
	Length	6.25mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Series SI7956DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 3.5W
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 17nC
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Width 5.26 mm
	Height 1.12mm
	Standards/Approvals No
	Length 6.25mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual MOSFET for space savings

• Halogen free

• Lead (Pb) free component

• Low on-resistance in new low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half bridge and forward converters

• High efficiency primary side switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

Vishay MOSFET

Features and Benefits

Applications

Certifications

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