제조사부품번호

Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

RS 제품 번호:: 180-7325
제조사 부품 번호:: SI7997DP-T1-GE3
제조업체:: Vishay

Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 reel of 3000 units)*

₩5,470,800.00

마지막 RS 재고

최종적인 3,000 개 unit(s)이 배송 준비 됨

수량	한팩당	릴당*
3000 - 12000	₩1,823.60	₩5,473,056.00
15000 +	₩1,787.88	₩5,363,640.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 180-7325
제조사 부품 번호:: SI7997DP-T1-GE3
제조업체:: Vishay

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-60A
	Maximum Drain Source Voltage Vds	-30V
	Series	SI7997DP
	Package Type	PowerPack
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	51nC
	Maximum Power Dissipation Pd	29W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Standards/Approvals	No
	Width	5.26 mm
	Length	6.25mm
	Height	1.12mm
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id -60A
	Maximum Drain Source Voltage Vds -30V
	Series SI7997DP
	Package Type PowerPack
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 51nC
	Maximum Power Dissipation Pd 29W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Standards/Approvals No
	Width 5.26 mm
	Length 6.25mm
	Height 1.12mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications

• Adaptor switches

• Battery management

• Load switches

Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack

Vishay MOSFET

Features and Benefits

Applications

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