Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3

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Subtotal (1 pack of 5 units)*

₩15,096.40

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5 - 745₩3,019.28₩15,096.40
750 - 1495₩2,944.08₩14,720.40
1500 +₩2,898.96₩14,494.80

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포장 옵션
RS 제품 번호:
180-7902
제조사 부품 번호:
SI7997DP-T1-GE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-60A

Maximum Drain Source Voltage Vds

-30V

Series

SI7997DP

Package Type

PowerPack

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

51nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

29W

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Width

5.26 mm

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 150°C

• PWM optimised

• TrenchFET power MOSFET

Applications


• Adaptor switches

• Battery management

• Load switches

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