Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack
- RS 제품 번호:
- 180-7312
- 제조사 부품 번호:
- SI7216DN-T1-E3
- 제조업체:
- Vishay
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 3000 units)*
₩3,575,760.00
일시적 품절
- 2026년 6월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 3000 - 12000 | ₩1,191.92 | ₩3,575,760.00 |
| 15000 + | ₩1,167.48 | ₩3,504,132.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7312
- 제조사 부품 번호:
- SI7216DN-T1-E3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SI7216DN | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -50°C | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Maximum Power Dissipation Pd | 20.8W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SI7216DN | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -50°C | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Maximum Power Dissipation Pd 20.8W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
관련된 링크들
- Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
- Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8
