Vishay Dual SIA931DJ Type P-Channel MOSFET, -4.5 A, -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
RS 제품 번호:
180-7340
제조사 부품 번호:
SIA931DJ-T1-GE3
제조업체:
Vishay
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-4.5A

Maximum Drain Source Voltage Vds

-30V

Package Type

PowerPack

Series

SIA931DJ

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

5W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

4.1nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Height

800μm

Length

2.15mm

Width

2.15mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay SIA931DJ is a dual P-channel MOSFET having drain to source(Vds) voltage of -30V.The gate to source voltage(VGS) is 20V. It is having Power PAK SC-70 package. It offers drain to source resistance (RDS.) 0.065ohms at 10VGS and 0.08ohms at 6VGS. Maximum drain current -4.5A.

Trench FET Gen III power MOSFET

Thermally enhanced Power PAK SC-70 package small footprint area low on resistance

100 % Rg tested

관련된 링크들