Vishay TrenchFET N-Channel Single MOSFETs, 34.6 A, 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3
- RS 제품 번호:
- 847-936
- 제조사 부품 번호:
- SIZF458LDT-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
₩2,502.00
일시적 품절
- 2027년 10월 25일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩2,502.00 |
| 10 - 24 | ₩1,630.00 |
| 25 - 99 | ₩960.00 |
| 100 - 499 | ₩938.00 |
| 500 + | ₩916.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 847-936
- 제조사 부품 번호:
- SIZF458LDT-T1-UE3
- 제조업체:
- Vishay
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 34.6A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.020Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 5.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS3 Compliant | |
| Height | 1mm | |
| Width | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 34.6A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.020Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 5.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS3 Compliant | ||
Height 1mm | ||
Width 3.3mm | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay dual N-channel MOSFET designed for efficient power management, primarily serving in switching applications that require high reliability and performance under varying voltage conditions.
Operates with a maximum drain-source voltage of 70 V for robust performance
Optimised for 50% duty cycle configurations, enhancing efficiency in switching
Utilises flip chip technology, offering superior thermal design for better heat dissipation
100% tested for R and UIS to ensure reliability in critical applications
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