Vishay SIZF456LDT Dual N-Channel MOSFET, 60 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3FS SIZF456LDT-T1-UE3
- RS 제품 번호:
- 736-357
- 제조사 부품 번호:
- SIZF456LDT-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩3,357.90
일시적 품절
- 2027년 6월 18일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩3,357.90 |
| 10 - 24 | ₩2,180.10 |
| 25 - 99 | ₩1,156.35 |
| 100 - 499 | ₩1,111.50 |
| 500 + | ₩1,090.05 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 736-357
- 제조사 부품 번호:
- SIZF456LDT-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N-Channel | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 70V | |
| Series | SIZF456LDT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0016Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 48W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N-Channel | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 70V | ||
Series SIZF456LDT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0016Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 48W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET offers high-performance dual N-channel functionality, providing efficient thermal management using flip chip technology to enhance heat dissipation. This device is specifically designed for demanding applications such as synchronous buck converters and telecom DC/DC circuits.
Robust design with a continuous drain current rating of 42.5 A
Guaranteed thermal stability with a maximum junction-to-ambient resistance of 28 °C/W
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