Vishay TrenchFET Dual N-Channel MOSFET, 125 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-UE3

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₩5,020.00

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Per Tape
1 - 9₩5,020.00
10 - 24₩3,280.00
25 - 99₩3,180.00
100 - 499₩3,080.00
500 +₩2,980.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
736-656
제조사 부품 번호:
SIZF5300DT-T1-UE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

125A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3FS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.00351Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

56.8W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay High performance Dual N-Channel MOSFET designed for efficient power management in various applications, delivering superior thermal performance and switching capabilities.

TrenchFET Gen V technology optimises efficiency and performance

Symmetric dual n-channel configuration enables versatile circuitry designs

High side and low side MOSFETs support 50% duty cycle applications

Extensive testing ensures reliable operation under rigorous conditions

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