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Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS

RS 제품 번호:: 252-0296
제조사 부품 번호:: SIZF640DT-T1-GE3
제조업체:: Vishay

Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS

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Subtotal (1 reel of 3000 units)*

₩7,670,400.00

재고있음

3,000 개 단위 배송 준비 완료

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수량	한팩당	릴당*
3000 - 6000	₩2,556.80	₩7,672,656.00
9000 +	₩2,481.60	₩7,442,544.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 252-0296
제조사 부품 번호:: SIZF640DT-T1-GE3
제조업체:: Vishay

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	159A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAIR 6 x 5FS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.00137Ω
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	30nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	62.5W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Symmetric Dual N Channel
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 159A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAIR 6 x 5FS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.00137Ω
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 30nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 62.5W
	Maximum Operating Temperature 150°C
	Transistor Configuration Symmetric Dual N Channel
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

Datasheet - SIZF640DT-T1-GE3

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

Symmetric dual N-channel

Flip chip technology optimal thermal design

High side and low side MOSFETs form optimized

Combination for 50 % duty cycle

Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS

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