Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- RS 제품 번호:
- 736-358
- 제조사 부품 번호:
- SIZF5302DT-T1-UE3
- 제조업체:
- Vishay
N
대량 구매 할인 기용 가능
Subtotal (1 tape of 1 unit)*
₩2,355.60
일시적 품절
- 2027년 6월 21일 부터 배송
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | ₩2,355.60 |
| 10 - 24 | ₩1,526.85 |
| 25 - 99 | ₩807.30 |
| 100 - 499 | ₩785.85 |
| 500 + | ₩762.45 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 736-358
- 제조사 부품 번호:
- SIZF5302DT-T1-UE3
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIZF5302DT | |
| Package Type | PowerPAIR 3 x 3FS | |
| Mount Type | Surface Mount | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 48.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.8nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIZF5302DT | ||
Package Type PowerPAIR 3 x 3FS | ||
Mount Type Surface Mount | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 48.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.8nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.
Utilises TrenchFET Gen V technology for enhanced efficiency
Features dual N-channel architecture that optimises heat dissipation
Capable of handling a maximum continuous drain current of 28.1A at 25°C
관련된 링크들
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- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET, 125 A, 30 V, 12-Pin PowerPAIR 3 x 3FS
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- Vishay Symmetric Dual N Channel 2 Type N-Channel MOSFET, 159 A, 40 V, 8-Pin PowerPAIR 6 x 5FS
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 258 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF928DT-T1-GE3
