Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3

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Subtotal (1 tape of 1 unit)*

₩2,416.00

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Tape(s)
Per Tape
1 - 9₩2,416.00
10 - 24₩1,566.00
25 - 99₩828.00
100 - 499₩806.00
500 +₩782.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
736-358
제조사 부품 번호:
SIZF5302DT-T1-UE3
제조업체:
Vishay
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브랜드

Vishay

Product Type

MOSFET

Channel Type

Dual N-Channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

SIZF5302DT

Package Type

PowerPAIR 3 x 3FS

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.0032Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Maximum Power Dissipation Pd

48.1W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14.8nC

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.

Utilises TrenchFET Gen V technology for enhanced efficiency

Features dual N-channel architecture that optimises heat dissipation

Capable of handling a maximum continuous drain current of 28.1A at 25°C

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