Microchip TC1550 1 P-Channel, N channel-Channel MOSFET Arrays, 350 mA, 500 V Enhancement, 8-Pin 8-Lead SOIC (TG)
- RS 제품 번호:
- 598-873
- 제조사 부품 번호:
- TC1550TG-G
- 제조업체:
- Microchip
N
Subtotal (1 reel of 3300 units)*
₩37,403,916.00
일시적 품절
- 2026년 3월 09일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3300 + | ₩11,334.52 | ₩37,404,536.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-873
- 제조사 부품 번호:
- TC1550TG-G
- 제조업체:
- Microchip
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | P-Channel, N channel | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | 8-Lead SOIC (TG) | |
| Series | TC1550 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 125Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.90mm | |
| Width | 3.9 mm | |
| Height | 1.75mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type P-Channel, N channel | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type 8-Lead SOIC (TG) | ||
Series TC1550 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 125Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 4.90mm | ||
Width 3.9 mm | ||
Height 1.75mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High voltage N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertexs proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low input capacitance
Fast switching speeds
Free from secondary breakdowns
Low input and output leakage
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