Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8
- RS 제품 번호:
- 215-2584
- 제조사 부품 번호:
- IRF7831TRPBF
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 reel of 4000 units)*
₩3,248,640.00
일시적 품절
- 2027년 11월 22일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 4000 - 16000 | ₩812.16 | ₩3,250,144.00 |
| 20000 + | ₩797.12 | ₩3,185,472.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 215-2584
- 제조사 부품 번호:
- IRF7831TRPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 40nC | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 40nC | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET series has 30V maximum drain source voltage in a SO-8 package. It has application high frequency point-of-load synchronous buck converter for applications in networking & computing systems.
RoHS Compliant
Industry-leading quality
Low RDS(ON) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
Ultra-Low Gate Impedance
관련된 링크들
- Infineon Dual HEXFET 1 Type N-Channel MOSFET Arrays, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF7831TRPBF
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel Power MOSFET, 10 A, 20 V Enhancement, 8-Pin SO-8 IRF8910TRPBF
- Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- Infineon HEXFET Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8