Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel, N channel-Channel MOSFET Arrays, 2.1 A
- RS 제품 번호:
- 598-027
- 제조사 부품 번호:
- TC2320TG-G
- 제조업체:
- Microchip
N
Subtotal (1 reel of 3300 units)*
₩9,529,344.00
일시적 품절
- 2026년 4월 13일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3300 + | ₩2,887.68 | ₩9,531,205.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-027
- 제조사 부품 번호:
- TC2320TG-G
- 제조업체:
- Microchip
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Package Type | SOIC | |
| Series | TC2320 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Independent N Channel and P Channel Mosfet | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.1A | ||
Package Type SOIC | ||
Series TC2320 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Independent N Channel and P Channel Mosfet | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while maintaining high input impedance and a positive temperature coefficient, typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
Low threshold
Low on resistance
Low input capacitance
Fast switching speeds
Free from secondary breakdown
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