Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,
- RS 제품 번호:
- 598-776
- 제조사 부품 번호:
- TC8220K6-G
- 제조업체:
- Microchip
Subtotal (1 reel of 3300 units)*
₩12,513,468.00
일시적 품절
- 2026년 3월 31일 부터 배송
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수량 | 한팩당 | 릴당* |
|---|---|---|
| 3300 + | ₩3,791.96 | ₩12,514,088.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 598-776
- 제조사 부품 번호:
- TC8220K6-G
- 제조업체:
- Microchip
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Microchip | |
| Channel Type | P-Channel, N channel | |
| Product Type | MOSFET Arrays | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | DFN | |
| Series | TC8220 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 8.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Two Pairs of N and P Channel | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1mm | |
| Length | 4mm | |
| Width | 4 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Microchip | ||
Channel Type P-Channel, N channel | ||
Product Type MOSFET Arrays | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type DFN | ||
Series TC8220 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 8.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Two Pairs of N and P Channel | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1mm | ||
Length 4mm | ||
Width 4 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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