제조사부품번호

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

RS 제품 번호:: 598-332
제조사 부품 번호:: TD9944TG-G
제조업체:: Microchip

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

Subtotal (1 reel of 3300 units)*

₩9,169,512.00

일시적 품절

2026년 3월 16일 부터 배송

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3300 +	₩2,778.64	₩9,171,373.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 598-332
제조사 부품 번호:: TD9944TG-G
제조업체:: Microchip

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Channel Type	Dual N
	Product Type	MOSFET Arrays
	Maximum Continuous Drain Current Id	2.8A
	Maximum Drain Source Voltage Vds	240V
	Series	TD9944
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.8V
	Transistor Configuration	Dual N Channel
	Maximum Operating Temperature	150°C
	Width	3.9 mm
	Length	4.9mm
	Standards/Approvals	RoHS Certificate of Compliance
	Height	1.75mm
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Channel Type Dual N
	Product Type MOSFET Arrays
	Maximum Continuous Drain Current Id 2.8A
	Maximum Drain Source Voltage Vds 240V
	Series TD9944
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.8V
	Transistor Configuration Dual N Channel
	Maximum Operating Temperature 150°C
	Width 3.9 mm
	Length 4.9mm
	Standards/Approvals RoHS Certificate of Compliance
	Height 1.75mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - TD9944TG-G

The Microchip Dual N-Channel enhancement-mode vertical MOSFETs use Supertex’s well-proven silicon-gate manufacturing process. This combination offers power handling capabilities similar to those of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance even in demanding environments.

High input impedance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays, 2.8 A, 240 V Enhancement, 8-Pin SOIC TD9944TG-G

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