제조사부품번호

Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8

RS 제품 번호:: 598-568
제조사 부품 번호:: TC7920K6-G
제조업체:: Microchip

Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8

Subtotal (1 reel of 3300 units)*

₩12,135,024.00

일시적 품절

2026년 3월 09일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	릴당*
3300 +	₩3,677.28	₩12,138,126.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 598-568
제조사 부품 번호:: TC7920K6-G
제조업체:: Microchip

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Microchip
	Product Type	MOSFET Arrays
	Channel Type	N channel, P-Channel
	Maximum Continuous Drain Current Id	1.8A
	Maximum Drain Source Voltage Vds	200V
	Series	TC7920
	Package Type	DFN
	Mount Type	Surface
	Pin Count	12
	Maximum Drain Source Resistance Rds	12Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Electrically Isolated N Channel and P Channel Pairs (2 Pairs)
	Width	4.15 mm
	Standards/Approvals	RoHS Certificate of Compliance
	Height	1mm
	Number of Elements per Chip	1
	Automotive Standard	No

	모두 선택
	브랜드 Microchip
	Product Type MOSFET Arrays
	Channel Type N channel, P-Channel
	Maximum Continuous Drain Current Id 1.8A
	Maximum Drain Source Voltage Vds 200V
	Series TC7920
	Package Type DFN
	Mount Type Surface
	Pin Count 12
	Maximum Drain Source Resistance Rds 12Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs)
	Width 4.15 mm
	Standards/Approvals RoHS Certificate of Compliance
	Height 1mm
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet - TC7920K6-G

COO (Country of Origin):: CN

The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.

Integrated gate to source resistor

Integrated gate to source Zener diode

Low threshold, low on-resistance

Low input and output capacitance

Fast switching speeds

Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8

관련된 링크들