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STMicroelectronics Sixpack Topology M2P45M12W2 6 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK

RS 제품 번호:: 640-673
제조사 부품 번호:: M2P45M12W2-1LA
제조업체:: STMicroelectronics

STMicroelectronics Sixpack Topology M2P45M12W2 6 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK

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Subtotal (1 unit)*

₩126,822.92

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2026년 10월 14일 부터 배송

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RS 제품 번호:: 640-673
제조사 부품 번호:: M2P45M12W2-1LA
제조업체:: STMicroelectronics

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모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Product Type	MOSFET Arrays
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Series	M2P45M12W2
	Package Type	ACEPACK DMT-32
	Mount Type	Through Hole
	Pin Count	32
	Maximum Drain Source Resistance Rds	60.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	100nC
	Forward Voltage Vf	2.5V
	Minimum Operating Temperature	-40°C
	Maximum Gate Source Voltage Vgs	22 V
	Transistor Configuration	Sixpack Topology
	Maximum Operating Temperature	175°C
	Length	44.50mm
	Standards/Approvals	AQG 324, Automotive‐grade
	Height	5.90mm
	Width	27.90 mm
	Number of Elements per Chip	6
	Automotive Standard	AQG 324

	모두 선택
	브랜드 STMicroelectronics
	Product Type MOSFET Arrays
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Series M2P45M12W2
	Package Type ACEPACK DMT-32
	Mount Type Through Hole
	Pin Count 32
	Maximum Drain Source Resistance Rds 60.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 100nC
	Forward Voltage Vf 2.5V
	Minimum Operating Temperature -40°C
	Maximum Gate Source Voltage Vgs 22 V
	Transistor Configuration Sixpack Topology
	Maximum Operating Temperature 175°C
	Length 44.50mm
	Standards/Approvals AQG 324, Automotive‐grade
	Height 5.90mm
	Width 27.90 mm
	Number of Elements per Chip 6
	Automotive Standard AQG 324

Datasheet - M2P45M12W2-1LA

COO (Country of Origin):: CN

The STMicroelectronics automotive-grade power module housed in the ACEPACK DMT-32 package. It implements a sixpack topology using second-generation silicon carbide (SiC) MOSFETs, optimized for the DC/DC converter stage in on-board chargers (OBCs) for hybrid and electric vehicles. Designed for high-efficiency and high-frequency switching, it integrates an NTC thermistor for temperature monitoring and features an aluminum nitride (AlN) insulated substrate for superior thermal performance.

1200 V blocking voltage for high-voltage applications

Typical RDS(on) of 47.5 mΩ for reduced conduction losses

Maximum junction temperature of 175 °C for thermal robustness

DBC Cu-AlN-Cu substrate for efficient heat dissipation

3 kV isolation voltage for enhanced safety

Integrated NTC sensor for real-time thermal feedback

STMicroelectronics Sixpack Topology M2P45M12W2 6 Type N-Channel MOSFET Arrays, 30 A, 1200 V Enhancement, 32-Pin ACEPACK

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