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Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0613N04NM6HSCATMA1

RS 제품 번호:: 349-394
제조사 부품 번호:: ISG0613N04NM6HSCATMA1
제조업체:: Infineon

Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0613N04NM6HSCATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩15,604.00

재고있음

3,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 18	₩7,802.00	₩15,604.00
20 - 198	₩7,021.80	₩14,043.60
200 - 998	₩6,476.60	₩12,953.20
1000 - 1998	₩6,016.00	₩12,032.00
2000 +	₩5,386.20	₩10,772.40

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-394
제조사 부품 번호:: ISG0613N04NM6HSCATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	299A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PG-WHITFN-10-1
	Series	ISG
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	0.88mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	69nC
	Maximum Power Dissipation Pd	167W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 299A
	Maximum Drain Source Voltage Vds 40V
	Package Type PG-WHITFN-10-1
	Series ISG
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 0.88mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 69nC
	Maximum Power Dissipation Pd 167W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS
	Automotive Standard No

Datasheet - ISG0613N04NM6HSCATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

Superior thermal management

Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0613N04NM6HSCATMA1

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