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Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

RS 제품 번호:: 349-152
제조사 부품 번호:: ISG0616N10NM5HSCATMA1
제조업체:: Infineon

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩18,480.40

재고있음

3,000 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
2 - 18	₩9,240.20	₩18,480.40
20 - 198	₩8,319.00	₩16,638.00
200 - 998	₩7,670.40	₩15,340.80
1000 - 1998	₩7,115.80	₩14,231.60
2000 +	₩6,382.60	₩12,765.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-152
제조사 부품 번호:: ISG0616N10NM5HSCATMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	Power Transistor
	Maximum Continuous Drain Current Id	139A
	Maximum Drain Source Voltage Vds	100V
	Package Type	PG-WHITFN-10-1
	Series	ISG
	Mount Type	Surface
	Pin Count	10
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	167W
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type Power Transistor
	Maximum Continuous Drain Current Id 139A
	Maximum Drain Source Voltage Vds 100V
	Package Type PG-WHITFN-10-1
	Series ISG
	Mount Type Surface
	Pin Count 10
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 167W
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - ISG0616N10NM5HSCATMA1

COO (Country of Origin):: MY

The Infineon OptiMOS 5 dual n-channel 100 V MOSFETs in scalable power block with dual-side cooling capability. Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 4.0 mΩ each with Q1/Q2 in a half-bridge configuration. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Minimized conduction losses

Reduced voltage overshoot

High power capability

Superior thermal performance

Lowest loop inductance

Superior switching performance/EMI

Superior thermal management

Infineon ISG Type N-Channel Power Transistor, 139 A, 100 V Enhancement, 10-Pin PG-WHITFN-10-1 ISG0616N10NM5HSCATMA1

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