Infineon ISC Type N-Channel Power Transistor, 142 A, 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1

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Subtotal (1 pack of 2 units)*

₩16,340.96

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  • 2026년 6월 01일 부터 배송
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한팩당
한팩당*
2 - 18₩8,170.48₩16,340.96
20 - 198₩7,358.32₩14,716.64
200 - 998₩6,786.80₩13,571.72
1000 - 1998₩6,298.00₩12,594.12
2000 +₩5,640.00₩11,281.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-143
제조사 부품 번호:
ISC046N13NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

142A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-TDSON-8

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

65nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

211W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The transistor also offers an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching performance. With very low reverse recovery charge (Qrr), it reduces switching losses, making it suitable for fast-switching applications. Additionally, the device is 100% avalanche tested, ensuring reliability and robustness under stress conditions.

175°C operating temperature

Optimized for motor drives and battery powered applications

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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