Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
- RS 제품 번호:
- 349-390
- 제조사 부품 번호:
- IQFH55N04NM6ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩17,901.00
재고있음
- 추가로 2026년 5월 11일 부터 3,000 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩8,950.50 | ₩17,901.00 |
| 20 - 198 | ₩8,053.50 | ₩16,107.00 |
| 200 - 998 | ₩7,429.50 | ₩14,859.00 |
| 1000 - 1998 | ₩6,903.00 | ₩13,806.00 |
| 2000 + | ₩6,171.75 | ₩12,343.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-390
- 제조사 부품 번호:
- IQFH55N04NM6ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 451A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQF | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.55mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 118nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 451A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQF | ||
Package Type PG-TSON-12 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.55mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 118nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.
Superior thermal resistance
N channel
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
관련된 링크들
- Infineon OptiMOSTM6 N-Channel MOSFET, 600 A, 40 V, 12-Pin PG-TSON-12 IQFH47N04NM6ATMA1
- Infineon OptiMOSTM6 N-Channel MOSFET, 600 A, 40 V, 12-Pin PG-TSON-12 IQFH39N04NM6ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET, 460 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH68N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET, 339 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET, 510 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET, 394 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH86N06NM5ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET, 656 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET, 120 V Enhancement, 8-Pin PG-TSON-8 ISC030N12NM6ATMA1