Infineon IQF Type N-Channel Power Transistor, 451 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1

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Subtotal (1 pack of 2 units)*

₩18,447.00

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한팩당*
2 - 18₩9,223.50₩18,447.00
20 - 198₩8,297.25₩16,594.50
200 - 998₩7,653.75₩15,307.50
1000 - 1998₩7,107.75₩14,215.50
2000 +₩6,357.00₩12,714.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-390
제조사 부품 번호:
IQFH55N04NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

451A

Maximum Drain Source Voltage Vds

40V

Package Type

PG-TSON-12

Series

IQF

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.55mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

118nC

Maximum Power Dissipation Pd

214W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor, 40 V is specifically optimized for low voltage drive applications and battery powered systems, making it ideal for energy efficient designs. It is also optimized for synchronous applications, ensuring enhanced performance. The MOSFET features very low on-resistance (RDS(on)), minimizing conduction losses for improved efficiency. Additionally, it is 100% avalanche tested, ensuring reliable performance under demanding conditions.

Superior thermal resistance

N channel

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

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