Infineon ISC Type N-Channel Power Transistor, 172 A, 135 V Enhancement, 8-Pin PG-TSON-8 ISC037N13NM6ATMA1

모든 MOSFETs 열람하기
대량 구매 할인 기용 가능

Subtotal (1 pack of 2 units)*

₩16,194.32

Add to Basket
수량 선택 또는 입력
일시적 품절
  • 2026년 6월 22일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
한팩당*
2 - 18₩8,097.16₩16,194.32
20 - 198₩7,286.88₩14,571.88
200 - 998₩6,722.88₩13,447.64
1000 - 1998₩6,234.08₩12,468.16
2000 +₩5,589.24₩11,178.48

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-142
제조사 부품 번호:
ISC037N13NM6ATMA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-TSON-8

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

82nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

250W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC, IEC61249-2-21

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The transistor also offers an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching performance. With very low reverse recovery charge (Qrr), it reduces switching losses, making it suitable for fast-switching applications. Additionally, the device is 100% avalanche tested, ensuring reliability and robustness under stress conditions.

175°C operating temperature

Optimized for motor drives and battery powered applications

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

관련된 링크들