Infineon ISG Type N-Channel Power Transistor, 299 A, 40 V Enhancement, 10-Pin PG-VITFN-10 ISG0613N04NM6HATMA1
- RS 제품 번호:
- 349-393
- 제조사 부품 번호:
- ISG0613N04NM6HATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩14,400.80
일시적 품절
- 2026년 8월 03일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩7,200.40 | ₩14,400.80 |
| 20 - 198 | ₩6,486.00 | ₩12,972.00 |
| 200 - 998 | ₩5,987.80 | ₩11,975.60 |
| 1000 - 1998 | ₩5,546.00 | ₩11,092.00 |
| 2000 + | ₩4,972.60 | ₩9,945.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-393
- 제조사 부품 번호:
- ISG0613N04NM6HATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 299A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | ISG | |
| Package Type | PG-VITFN-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 0.88mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249‑2‑21, JEDEC | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 299A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series ISG | ||
Package Type PG-VITFN-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 0.88mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249‑2‑21, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 dual N-channel 40 V MOSFETs in a scalable power block package. Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2 in a half-bridge configuration.
Minimized conduction losses
Reduced voltage overshoot
High power capability
Superior thermal performance
Lowest loop inductance
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