Infineon ISC Type N-Channel MOSFET, 88 A, 200 V Enhancement, 8-Pin PG-TSON-8 ISC130N20NM6ATMA1
- RS 제품 번호:
- 349-148
- 제조사 부품 번호:
- ISC130N20NM6ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 2 units)*
₩23,520.00
일시적 품절
- 2027년 8월 25일 부터 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩11,760.00 | ₩23,520.00 |
| 20 - 198 | ₩10,590.00 | ₩21,180.00 |
| 200 + | ₩9,760.00 | ₩19,520.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-148
- 제조사 부품 번호:
- ISC130N20NM6ATMA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 242W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 242W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
Infineon ISC Series MOSFET, 200V Drain Source Voltage, 88A Continuous Drain Current - ISC130N20NM6ATMA1
This MOSFET is a high-current N-channel switch designed for surface-mount power applications. It operates across a wide temperature span suitable for demanding environments and is intended for use where robust voltage handling and efficient conduction are required. The device is supplied in a compact PG-TSON-8 package for board-level mounting and complies with industry manufacturing standards.
Features and Benefits:
• 200V maximum drain voltage enables high-voltage switching
• 88A continuous drain current supports heavy load currents
• 13 mΩ low Rds(on) reduces conduction losses
• 242W power dissipation manages substantial thermal load
• 39 nC typical gate charge allows controlled switching energy
• ±20V gate tolerance protects gate from overdrive
• 88A continuous drain current supports heavy load currents
• 13 mΩ low Rds(on) reduces conduction losses
• 242W power dissipation manages substantial thermal load
• 39 nC typical gate charge allows controlled switching energy
• ±20V gate tolerance protects gate from overdrive
Applications
• Suitable for high-power DC-DC converters in industrial systems
• Ideal for motor-drive power stages requiring high current
• Used with battery-management systems in energy storage hardware
• Can be used for synchronous rectification in power supplies
• Suitable for fast-switching inverter circuits in power electronics
• Ideal for motor-drive power stages requiring high current
• Used with battery-management systems in energy storage hardware
• Can be used for synchronous rectification in power supplies
• Suitable for fast-switching inverter circuits in power electronics
What mounting method is required for board assembly?
It is intended for surface-mount assembly using the PG-TSON-8 footprint.
How does it behave across temperature extremes?
It is specified to operate from -55 °C up to 175 °C, supporting thermal margin in harsh conditions.
What standards govern its material and handling?
Manufacture and handling adhere to JEDEC and J-STD-020 provisions and RoHS restrictions.
What gate-drive constraints should designers observe?
The gate must be driven within ±20V to avoid exceeding gate-source limits.
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