Infineon ISC Type N-Channel Power Transistor, 74 A, 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1

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Subtotal (1 pack of 2 units)*

₩18,754.88

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한팩당*
2 - 18₩9,377.44₩18,754.88
20 - 198₩8,441.20₩16,882.40
200 - 998₩7,785.08₩15,570.16
1000 - 1998₩7,222.96₩14,445.92
2000 +₩6,474.72₩12,947.56

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
349-149
제조사 부품 번호:
ISC151N20NM6ATMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

200V

Package Type

PG-TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15.1mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

31nC

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249-2-21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps to minimize conduction losses and improve system efficiency. With an excellent gate charge x RDS(on) product (FOM), this transistor ensures optimized switching performance. It also offers very low reverse recovery charge (Qrr), reducing switching losses and enhancing overall efficiency in fast-switching circuits. Designed to operate at a 175°C temperature, it provides high reliability in demanding environments and offers superior thermal performance for robust operation.

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

100% avalanche tested

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