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Infineon ISC Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1

RS 제품 번호:: 349-151
제조사 부품 번호:: ISC320N12LM6ATMA1
제조업체:: Infineon

Infineon ISC Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1

대량 구매 할인 기용 가능

Subtotal (1 pack of 10 units)*

₩14,043.60

재고있음

4,970 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 90	₩1,404.36	₩14,051.12
100 - 240	₩1,334.80	₩13,342.36
250 - 490	₩1,237.04	₩12,364.76
500 - 990	₩1,139.28	₩11,387.16
1000 +	₩1,097.92	₩10,969.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 349-151
제조사 부품 번호:: ISC320N12LM6ATMA1
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	24A
	Maximum Drain Source Voltage Vds	120V
	Series	ISC
	Package Type	PG-TDSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	32mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.1nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	43W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, J-STD-020, RoHS
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 24A
	Maximum Drain Source Voltage Vds 120V
	Series ISC
	Package Type PG-TDSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 32mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.1nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 43W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, J-STD-020, RoHS
	Automotive Standard No

Datasheet - ISC320N12LM6ATMA1

COO (Country of Origin):: CN

The Infineon OptiMOS 6 Power Transistor is an N channel, logic level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving energy efficiency. The transistor offers an excellent gate charge x RDS(on) product (FOM), enhancing switching performance. With very low reverse recovery charge (Qrr), it minimizes switching losses, making it ideal for fast-switching applications. It also has a high avalanche energy rating, ensuring robustness under transient conditions. Additionally, the MOSFET operates at a 175°C temperature, providing high thermal endurance for demanding applications.

Optimized for high frequency switching and synchronous rectification

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

Infineon ISC Type N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1

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