Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- RS 제품 번호:
- 349-141
- 제조사 부품 번호:
- ISC035N10NM5LF2ATMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩15,047.52
재고있음
- 5,000 개 단위 배송 준비 완료
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 18 | ₩7,523.76 | ₩15,049.40 |
| 20 - 198 | ₩6,775.52 | ₩13,551.04 |
| 200 - 998 | ₩6,245.36 | ₩12,488.84 |
| 1000 - 1998 | ₩5,797.92 | ₩11,593.96 |
| 2000 + | ₩5,192.56 | ₩10,387.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-141
- 제조사 부품 번호:
- ISC035N10NM5LF2ATMA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 217W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 217W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 5 Linear FET 2, 100 V is an N-channel, normal level MOSFET specifically designed for hot-swap, battery protection, and e-fuse applications. It features very low on resistance (RDS(on)), which helps minimize conduction losses, enhancing efficiency. The MOSFET also offers a wide safe operating area (SOA), ensuring reliable performance under a variety of operating conditions. These features make it an ideal choice for applications requiring robust, efficient, and reliable power management.
100% avalanche tested
Pb‑free lead plating and RoHS compliant
Halogen‑free according to IEC61249‑2‑21
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